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  ratings at 25 ambient temperature unless otherwise specified. single phase half-wave 60 hz, resistive or inductive load, for capacitive load current derate by 20 %. c maximum dc blocking voltage peak forward surge current 8.3 ms single half sine wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 1 a p a r a m e t e r maximum repetitive peak revers e voltage maximum rms voltage operating and storage temperature range maximum average forward rectified current at ta = 75 c maximum dc reverse current ta = 25 c at rated dc blocking voltage ta =125 c maximum reverse recovery time 2 ? v rrm v rms v dc i f(av) i fsm v f i r s y m b o l s 50 100 200 400 600 800 1000 v 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v 1 1.3 5 50 50 -55 ~ +150 a a v ?a ns c m a x i m u m r a t i n g s a n d e l e c t r i c a l c h a r a c t e r i s t i c s u n i t s t, t j stg t rr 1.5 1.0 u s 1 a b f u s 1 b b f u s 1 d b f u s 1 g b f u s 1 j b f u s 1 k b f u s 1 m b f p i n n i n g pin 1 2 description cathode anode simplified outline smbf symbol 1 2 s u r f a c e m o u n t u l t r a f a s t r e c o v e r y r e c t i f i e r r e v e r s e v o l t a g e  5 0 v ~ 1 0 0 0 v f o r w a r d c u r r e n t  1 . 0 a mechanical data " " terminals: solderable per mil-std-750, method 2026 " pprox. weight: 57m g / 0. 002oz case: smbf a features for surface mounted applications " low profile package " glass passivated chip junction " superfast reverse recovery time " lead free in comply with eu rohs 2011/65/eu directives " top view marking code: u 1ab~u1mb measured at 1 mhz and applied re verse voltage o f 4 v d.c 2 ) 3 ? 1 ? measured with if = 0.5 a, ir = 1 a, irr = 0.25 a 2 p.c.b. mounted with 0. 5 x 0.5" (12.7 x 12.7 mm ) copper pad areas. 3 ? 85 25 typical thermal resistance r ? ja r ? jl c/w 1 ? typical junction capacitance 45 pf c j 35 75 u s 1 a b f t h r u u s 1 m b f
50 ohm noninductive 25vdc approx + - d.u.t 10 ohm noninductive noninductive 1 ohm oscilloscope note 1 pulse generator note 2 note ? 1 . rise time = 7ns, max. input impedance = 1megohm,22pf. 2. ries time =10ns, max. source impedance = 50 ohms. f i g . 1 r e v e r s e r e c o v e r y t i m e c h a r a c t e r i s t i c a n d t e s t c i r c u i t d i a g r a m f i g . 3 t y p i c a l r e v e r s e c h a r a c t e r i s t i c s i - current ( a) r reverse ? 20 100 60 0 0.1 1.0 10 % of piv.volts 100 40 80 300 t=25 j c t=75 j c t=125 j c -0.25 -1.0 0 +0.5 t rr 10ns/div set time base for 10ns/div 10 30 00 10 100 f i g . 4 m a x i m u m n o n - r e p e t i t i v e p e a k f o r w a r d s u r a g e c u r r e n t peak a) forward surage current ( number of cycles 8.3 ms single half sine wave (jedec method) 1 0.5 1.0 0.0 25 50 75 100 125 150 175 average forward current (a) ambient /lead temperature ( c) f i g . 2 m a x i m u m a v e r a g e f o r w a r d c u r r e n t r a t i n g single phase half wave resistive or inductive p.c.b mounted on 0.5 0.5"(12.7 ) 12.7mm pad areas. ambient lead 100lfm f i g . 3 t y p i c a l i n s t a n e o u s f o r w a r d c h a r a c t e r i s t i c s instaneous forward current (a) 0.5 1.0 1.5 2.0 2.5 0.0 0.01 0.1 1.0 10 instaneous forwar d voltage (v) 20 pulse with 300?s 1% duty cycle t=25 j c us1abf ~ us1dbf us1gbf us1jbf ~ us1mbf 20 40 u s 1 a b f t h r u u s 1 m b f
m a r k i n g type number marking code us1abf us1bbf us1dbf us1gbf us1jbf us1kbf us1mbf u1ab u1bb u1db u1gb u1jb u1kb us1mb t h e r e c o m m e n d e d m o u n t i n g p a d s i z e unit ? mm(mil) 3.0(118) 1.8(71) 2.54(100) 1.8(71) p a c k a g e o u t l i n e p l a s t i c s u r f a c e m o u n t e d p a c k a g e ; 2 l e a d s s m b f a c " all round v a m e unit mm 1.3 0.26 4.4 3.7 5.5 1.1 0.18 4.2 3.5 5.1 9 max min mil max min acde h e " 2.2 1.9 e bottom view h e g to p view 1.0 g g " all round e d a e pad pad 51 10 173 146 216 43 7 165 138 200 86 75 40 u s 1 a b f t h r u u s 1 m b f


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